| 摘要 |
PURPOSE: To reduce exhaustion of carrier in a hetero junction interface by providing a planar doping layer of one conductivity type decision impurities of a small diffusion coefficient to an interface between one conductivity type AlInGaP layer and one conductivity type III-V compound semiconductor layer containing As provided thereon. CONSTITUTION: A planar doping layer 5 of one conductivity type conductivity type decision impurities of a small diffusion coefficient is provided to an interface between one conductivity type Alx Iny Ga1-x-y P layer 4 and one conductivity type III-V compound semiconductor layer 6 provided thereon. The one conductivity type Alx Iny Ga1-x-y P layer 4 is n-type InGaP of x=0 and one conductivity type conductivity type decision impurities of a small diffusion coefficient are Si. The one conductivity type III-V compound semiconductor layer 6 containing As is any of one conductivity type GaAs layer, one conductivity type AlGaAs layer and one conductivity type GaAs/AlGaAs hetero junction composite layer.
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