| 发明名称 |
FUSE ELEMENT AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p>a field oxide(2) formed on a semiconductor substrate(1); a first electrode(3) formed and patterned on the field oxide(2); a first insulating film(4) formed on the field oxide(2) through the upper part of both ends of the first electrode(3); a second insulating film(5) used as an interfacial layer by being formed on the exposed surface of the first electrode(3); and a second electrode(6) formed on the second insulating film(5).</p> |
| 申请公布号 |
KR960015326(B1) |
申请公布日期 |
1996.11.07 |
| 申请号 |
KR19930014240 |
申请日期 |
1993.07.26 |
| 申请人 |
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KANG, SANG-WON;BAEK, JONG-TAE |
| 分类号 |
H01L21/82;H01L21/822;H01L23/525;H01L27/04;H01L29/41;H01L29/86;(IPC1-7):H01L29/86 |
主分类号 |
H01L21/82 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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