Method of making tunable semiconductor laser

摘要

In a method of making a tunable twin guide (TTG) type tunable semiconductor laser, over the surface of a semiconductor substrate (5) of one conductivity type, a tuning layer (22), a central layer (23) of the opposite conductivity type, and an active layer (24) are sequentially deposited over one another by a selective epitaxy method such as metal organic vapor phase epitaxy (MOVPE). Each layer is stripe-shaped. This method differs from conventional methods in which the processing of semiconductor elements for defining the current path/optical waveguide inside the laser is carried out by etching.