| 摘要 |
PURPOSE: To obtain a high integration fine pattern SRAM cell in which a stabilized operation can be ensured even under low voltage. CONSTITUTION: After making contact holes 501, 502 while traversing the active region 20 sufficiently on a semiconductor substrate 1 sufficiently, word lines 601, 604 and the gate electrodes 602, 603 of an access transistor are formed while traversing the active region 20 sufficiently. At that time, the contact holes 501, 502 are etched at the bottom part thereof and a level difference is formed thereat. Since the connection resistance can be increased without increasing the fabrication step, driving capacity of the access transistor can be reduced and theβratio can be increased.
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