| 摘要 |
PURPOSE: To provide a semiconductor device in which insulating films having a plurality of kinds of different film thicknesses can be manufactured simultaneously by one process and to provide its manufacturing method. CONSTITUTION: As shown in Fig. (a), the film thicknessαof a coating insulating film 2 formed on a place A in which substrate patterns 1 are congested is thick as compared with the film thicknessβof a coating insulating film 2 formed on a place B in which a substrate pattern 1 is isolated. As shown in Fig. (b), the film thicknessαof a coating insulating film 2 which is formed on a place A in which the line width of a substrate pattern 1 is wide is thick as compared with the film thickness of a coating insulating film 2 formed on a place B in which the line width of a substrate pattern 1 is slender. As shown in Fig. (c), the film thicknessαof a coating insulating film 2 formed on a place A in which the height of a substrate pattern 1 is low with reference to a pattern in the circumference is thick as compared with the film thicknessβof a coating insulating film 2 formed on a place B in which the height of a substrate pattern 1 is high with reference to a pattern in the circumference.
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