Component insulating method for LOCOS semiconductor memory module

摘要

The method involves determining an active and a non-active region of a semiconductor substrate by forming a field oxide layer in the non-active region, while a diffusion layer is formed in the active region. On the substrate surface with the diffusion layer is formed a wiring layer, partly coupled to the diffusion layer. A photosensitive layer pattern is formed over part of the diffusion layer and an adjacent peripheral part of the field oxide layer on the wiring layer. A contact point support is produced by structuring the wiring layer, using the photosensitive layer pattern. In the substrate is formed a first channel stop impurity layer under the field oxide layer by implanting channel stop impurity atoms directly at the contact position construction of the substrate construction. The photosensitive layer pattern is separated before the implantation step.