SOURCE/DRAIN JUNCTION FORMING METHOD

摘要

forming a source/drain junction(6) by an ion-injection of N+ or P+ impurity in the state that a field oxide(2), a gate oxide film(3) and a gate electrode(4) are formed on a silicon substrate(1); depositing a thin Ti(7) on the entire surface; forming a Ti-silicide(8) on the junction(6) and the gate electrode(4) by a rapid thermal process to leave the remained Ti(7a) on the rest part; injecting ions into the junction(6) through the Ti-silicide(8) by an ion-implantation process; and completing the junction(6) by a conventional tube thermal process after removing the remained Ti(7a) by a selective etching.