| 摘要 |
PURPOSE: To obtain a semiconductive resin composite which is produced with low dusting in its production process, can achieve semiconductivity with a filler loading lower than required by a conventional technique, and exhibits little variation in vol. resistivity. CONSTITUTION: This composite is prepd. by dispersing flat graphite and a conductive filler in a polymer matrix. subject to the conditions that the sum of vols. of the graphite and the filler is 7-20vol.% of the composite, that the vol. ratio of the graphite to the filler is (1:2)-(3:1), that the vol. resistivity of the composite is 10<6> -10<12>Ω.cm, that the diameter of a circle having the same area as that of the flat plane the graphite is 2-20μm, and that the filler has an average particle size of 1μm or higher, the size being smaller than the diameter of a circle having the same area as that of the flat plane of the graphite, and has a vol. resistivity higher than that of the graphite.
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