| 摘要 |
PURPOSE: To enable the formation at a prescribed position regardless of a substrate shape without heating the surface of the substrate with good controllability by implanting metallic or semimetallic ions into a hexagonal boron nitride thin film and carrying out the crystal phase transition thereof into a cubic boron nitride. CONSTITUTION: A hexagonal boron nitride thin film is initially formed on a substrate such as silicon according to a radio frequency (RF)-plasma CVD method and a metallic or a semimetallic element in the group Ib, IIb, IIIb, IV, V or VIII of the periodic table, e.g. ions such as Pt are then implanted to carry out the phase transition of the crystal from a hexagonal boron nitride into a cubic boron nitride. Thereby, a cubic boron nitride thin film is obtained. The ion implantation energy in implanting the ions is 0.1-4 Mev and the quantity of the implanted ions is 1×10<15> to 1×10<18> ions/cm<2> in implanting the ions to enable the crystal phase transition even at an ultralow temperature. Since the admitting depth can be controlled by controlling the energy of the implanted ions, the cubic boron nitride layer can be formed at an optional depth in the hexagonal boron nitride layer.
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