Rückbearbeitungsverfahren zum Analysieren eines Fehlverhaltens in einer Halbleitervorrichtung

摘要

A deprocessing method for analyzing a polysilicon contact open failure and contact misalignment in a semiconductor device comprises the steps of: removing a passivation layer and double metal layer placed on a wafer including a memory cell thereon; selectively removing the upper portions of a polysilicon 30 forming a capacitor and polysilicon 28 forming a bit line through plasma dry etch; and carrying out wet etch using an etchant having HF to expose a field oxide layer 22, and at the same time, to leave the lower portions of the polysilicon layer forming the bit line, and a polysilicon layer forming a capacitor storage node on the wafer.