发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a technique by which the high-density packaging operation of interconnections and the multilayer system of the interconnections can be realized simultaneously in a semiconductor integrated circuit device comprising a multilayer interconnection. SOLUTION: In a gate array comprising a six-layer interconnection, a second- layer interconnection 9 up to a fifth-layer interconnection 12 are used as signal interconnections. The second-layer interconnection 9 and the frouth-layer interconnection 11 are extended to the Y-direction at an interconnection pitch of 2.0μm, and they are arranged so as to be shifted by 1.0μm as a half distance of the interconnection pitch. In addition, the third-layer interconnection 10 and the fifth-layer interconnection 12 are extended into the X-direction at an interconnection pitch of 2.0μm, and they are arranged so as to be shifted by 1.0μm as a half distance of the interconnection pitch.
申请公布号 JPH0927589(A) 申请公布日期 1997.01.28
申请号 JP19950175681 申请日期 1995.07.12
申请人 HITACHI LTD 发明人 YAMAGUCHI HIDE;OWADA NOBUO;SAITO TATSUYUKI;OOGAYA KAORU
分类号 H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/12;H01L23/52;H01L23/522;H01L23/538;H01L27/04;H01L27/118;(IPC1-7):H01L23/522;H01L21/320 主分类号 H01L21/3205
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