METHOD OF FORMING TWO TRANSISTORS IN SEMICONDUCTOR BASE BODY,申请号JP19960204331-传众专利搜索

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发明名称	METHOD OF FORMING TWO TRANSISTORS IN SEMICONDUCTOR BASE BODY
摘要
申请公布号	JPH0936248(A)	申请公布日期	1997.02.07
申请号	JP19960204331	申请日期	1996.07.15
申请人	SIEMENS AG	发明人	FURANKU PUFUIRUSHIYU
分类号	H01L27/06;H01L21/266;H01L21/336;H01L21/8222;H01L21/8234;H01L21/8238;H01L21/8248;H01L21/8249;H01L27/092;H01L29/08;H01L29/78;(IPC1-7):H01L21/823;H01L21/822;H01L21/824	主分类号	H01L27/06
代理机构		代理人
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