发明名称 |
Hybrid capacitive baseline management |
摘要 |
In a method of managing baselines of a capacitive sensing input device, a transcapacitive baseline, a first absolute capacitive baseline, and a second absolute capacitive baseline are acquired with a plurality of sensor electrodes of the capacitive sensing input device. A transcapacitive image, a first absolute capacitive profile, and a second absolute capacitive profile are acquired with the plurality of sensor electrodes. The transcapacitive baseline, the first absolute capacitive baseline, and the second absolute capacitive baseline are managed based on a value of at least one of the first absolute capacitive profile and the second absolute capacitive profile. |
申请公布号 |
US9507472(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201414327530 |
申请日期 |
2014.07.09 |
申请人 |
Synaptics Incorporated |
发明人 |
Fotopoulos Nickolas;Reynolds Joseph Kurth;Vandermeijden Tom |
分类号 |
G06F3/044;G06F3/041 |
主分类号 |
G06F3/044 |
代理机构 |
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代理人 |
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主权项 |
1. A method of managing baselines of a capacitive sensing input device, said method comprising:
acquiring a transcapacitive baseline, a first absolute capacitive baseline, and a second absolute capacitive baseline with a plurality of sensor electrodes of the capacitive sensing input device; acquiring a transcapacitive image with said plurality of sensor electrodes, a first absolute capacitive profile with a first subset of sensor electrodes of said plurality of sensor electrodes, and a second absolute capacitive profile with a second subset of sensor electrodes of said plurality of sensor electrodes, wherein sensor electrodes of said first subset are different from sensor electrodes of said second subset; determining an absolute capacitive image as a function of said first absolute capacitive profile and said second absolute capacitive profile; determining a hybrid capacitive image as a function of said absolute capacitive image and said transcapacitive image; and managing said transcapacitive baseline, said first absolute capacitive baseline, and said second absolute capacitive baseline based on a value of at least one of said first absolute capacitive profile and said second absolute capacitive profile. |
地址 |
San Jose CA US |