发明名称 Hybrid capacitive baseline management
摘要 In a method of managing baselines of a capacitive sensing input device, a transcapacitive baseline, a first absolute capacitive baseline, and a second absolute capacitive baseline are acquired with a plurality of sensor electrodes of the capacitive sensing input device. A transcapacitive image, a first absolute capacitive profile, and a second absolute capacitive profile are acquired with the plurality of sensor electrodes. The transcapacitive baseline, the first absolute capacitive baseline, and the second absolute capacitive baseline are managed based on a value of at least one of the first absolute capacitive profile and the second absolute capacitive profile.
申请公布号 US9507472(B2) 申请公布日期 2016.11.29
申请号 US201414327530 申请日期 2014.07.09
申请人 Synaptics Incorporated 发明人 Fotopoulos Nickolas;Reynolds Joseph Kurth;Vandermeijden Tom
分类号 G06F3/044;G06F3/041 主分类号 G06F3/044
代理机构 代理人
主权项 1. A method of managing baselines of a capacitive sensing input device, said method comprising: acquiring a transcapacitive baseline, a first absolute capacitive baseline, and a second absolute capacitive baseline with a plurality of sensor electrodes of the capacitive sensing input device; acquiring a transcapacitive image with said plurality of sensor electrodes, a first absolute capacitive profile with a first subset of sensor electrodes of said plurality of sensor electrodes, and a second absolute capacitive profile with a second subset of sensor electrodes of said plurality of sensor electrodes, wherein sensor electrodes of said first subset are different from sensor electrodes of said second subset; determining an absolute capacitive image as a function of said first absolute capacitive profile and said second absolute capacitive profile; determining a hybrid capacitive image as a function of said absolute capacitive image and said transcapacitive image; and managing said transcapacitive baseline, said first absolute capacitive baseline, and said second absolute capacitive baseline based on a value of at least one of said first absolute capacitive profile and said second absolute capacitive profile.
地址 San Jose CA US