METHOD FOR MANUFACTURING FOR WELL LAYER OF BIPOLAR TRANSISTOR

摘要

The method solving indentation problem caused after self auto doping and epitaxial growing in injection process of arsenic(As) includes steps ; a) forming impurity buried layer after forming pattern of oxide layer ; b) performing pre oxidation process to form new oxide layer on the impurity buried layer ; c) diffusing impurity ion in enough into the buried layer under N2 environment ; d) performing post oxidation process to form oxide layer ; and e) performing isolation process after forming single crystal silicon layer on substrate.