| 摘要 |
On the P type semiconductor substrate(31), the trenches(39) are formed. At the top of the semiconductor substrate(31) other than the trenches, N type drain(33) is made, on top of which, the first insulating film(40) made of the oxide film or the nitride film is spread. And on the semiconductor substrate(31) in front of the trench(39), P type selection channel(38) is placed to control the threshold voltage, in the middle of the selection channel(38), a source(32) is formed. And the gate insulating film(34) made of oxide or nitride is placed at the trench sidewall and the surface of semiconductor substrate.
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