| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist which is used in the field of producing semiconductor devices, etc., and with which an etching operation is possible and a process for producing fine patterns by using this resin. SOLUTION: A resist film 12 consisting of an photo-acid generating agent which forms an acid by irradiation with far UV light, a pH indicator which lowers the transmittance of (i) rays by developing colors in the presence of the acid, naphthoquione diazide and novolak resin is laminated on a substrate 4. The photo-acid generator forms the acid to allow the pH indicator to develop the color when the resist film 12 is partly irradiated with the far UV light 10, and the parts 11 degraded in the transmittance of the (i) rays are formed on the surface of the resist film (A). Developed patterns 13 are obtd. by etching the resist film with an alkaline soln. after the irradiation (B) with the (i) rays 14 by utilizing the parts 11 as a mask. |
