| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capably of alleviating shrinkage stress resulting from the curing of a resist, making constant the curing degree of the exposed part of the resist in a short time after exposure, and giving a high developability without any dispersion, regarding a method for directly patterning the resist. SOLUTION: This resist pattern forming method and circuit pattern forming method involve processes of a sequence (1) curing a resist pattern to a pattern form via the pattern type irradiation of a laser beam to the resist layer of a substrate having the resist layer and a cover coat thereon, depending on necessity by use of the direct drawing method, (2) heating the substrate having the cured resist layer at a temperature between 50 and 160 deg.C for 10 to 30 seconds, and (3) developing the heated resist layer for forming the resist pattern. Also, an etching process is applied to the substrate with the resist pattern formed thereon, and a residual resist layer is removed. |
