ALSB/INP SINGLE HETERO-JUNCTION TRANSISTOR ON INP SUBSTRATE FOR HIGH SPEED AND POWER

摘要

PROBLEM TO BE SOLVED: To provide the epitaxial structure of a single hetero-junction bipolar transistor using InP for a base and a collector and having high power capacity at high speed. SOLUTION: This transistor has a collector 18 composed of InP on a semiconductor supporter 20, a base 16 constituted of InP on the collector 18, and an emitter 12 on the base 16, and the emitter 12 is configured of approximately 39mol% AlP and approximately 61mol% AlSb. A gradient concentration distribution layer 14 is formed between the base 16 and the emitter 12.