| 摘要 |
A method for fabricating a infrared rays sensor is described that can form a first insulating layer of the infrared rays sensor using nitride layer. The method includes the steps of forming a doped layer 2 on a silicon supporter substrate 1, forming a first insulating layer 12 of Mg oxide on the doped layer 2, masking bottoms of the silicon supporter substrate 1 using a silicon oxide layer3' and silicon nitride layer 4', etching the bottom of the silicon supporter substrate 1 which is not masked, and sequentially forming a reflecting layer 5, dielectric layer 6, second insulating layer 7 and absorbing layer 8 using deposition or mask-etch processes on the first insulating layer 12. Thereby, it is possible to reduce a production cost of the sensor and improve the sensing detgree and reliability thereof.
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