| 摘要 |
PROBLEM TO BE SOLVED: To prevent a phenomenon in which a wafer develops warpage in a treatment chamber held at high temperature when the wafer is loaded into the chamber in a single-wafer-type treatment system that physically or chemically treats wafers in a high-temperature atmosphere. SOLUTION: A wafer transfer chamber 1 is located adjacent to treatment chambers 2, 3, and the wafer transfer mechanism in the wafer transfer chamber 1 transfers wafers from cassette chambers 4, 5 to the treatment chambers 2, 3. Transparent windows are formed above the wafer stop positions in the wafer transfer chamber 1, and infrared heaters 9, 10 are installed on the windows. The infrared heaters 9, 10 are used to preheat wafers. |
