| 摘要 |
A method for producing a semiconductor device, includes the steps of: exposing a substrate using a first photomask (10) to form a first chip pattern (2) on the substrate, the first chip pattern (2) being divided into first sub-patterns (2A,2B,2C) at a first position on the first photomask so that the first sub-patterns are combined on the substrate and form the first chip pattern; exposing the substrate using a second photomask (20) to form a second chip pattern (3) on the substrate, the second chip pattern being divided into second sub-patterns (3A,3B,3C) at a second position on the second photomask so that the second sub-patterns are combined on the substrate and form the second chip pattern; and wherein the second position on the second photomask is different relative to the first position on the first photomask. <IMAGE> |
