Silicon On Insulator structure with single crystal semiconductor substrate

摘要

The SOI structure has a single crystal semiconductor substrate (1), an insulating layer (2) formed on this substrate and a single crystal semiconductor layer (32) formed on the insulating layer and a quasi grain barrier (7). The SOI structure has a highly doped section (40), which contains a higher concentration of impurities than the remaining region in the semiconductor layer (32), and is formed in a region, which contains the quasi grain barrier (7). The concentration of the impurities of the highly doped section (40) in the single crystal semiconductor layer (32), amounts to not less than 4 x 10x17 cm-3.