| 摘要 |
Ion of low density is implanted, forming a first spacer insulating film(5) and ion of high density is implanted, forming an active area of a first LDD structure. Then, a second insulating oxide film(11) is deposited, a photoresist film being spreaded, exposed and developed to form photoresist film pattern(13). The contact hole(15), the gate electrode and the word line(4) are formed at the same time by etching of the second insulating film, the preliminary gate electrode and word line polycrystal silicon, inside of which the ion of low density being implanted to form the second insulating film spacer(12). And the ion of high density is implanted, an active area(6') of a second LDD structure being formed, then a second conduction layer being deposited, a second conduction layer electrode(10) being formed, producing the contact.
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