发明名称 |
PRODUCTION OF LOW ALPHA RAY LEAD |
摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a lowαray dose lead having theαray dose extremely lower than theαray dose of the conventional products. SOLUTION: The lead for semiconductor materials having a grade of >=4 nines and a count number of radioactiveαparticles of <=0.05CHP/cm<2> is produced by executing electrolyte refining using the crude lead obtd. by heating and melting lead sulfide together with aluminum having theΑray dose of <=1CHP/cm<2> and a flux in a nonoxidizing atmosphere, thereby subjecting the lead sulfide to desulfurization reduction as anode and sulfamic acid contg. substantially no radioactive isotope as an electrolyte.
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申请公布号 |
JPH09165691(A) |
申请公布日期 |
1997.06.24 |
申请号 |
JP19950346999 |
申请日期 |
1995.12.14 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
MOCHIDA HIROMI |
分类号 |
C25C1/18;(IPC1-7):C25C1/18 |
主分类号 |
C25C1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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