PHOTO LITHOGRAPHY METHOD OF SEMICONDUCTOR DEVICE

摘要

A method of forming a photoresist pattern of a semiconductor device includes the steps of coating a first photoresist on a wafer which passed through predetermined processes, and performing the first exposure and development to the first photoresist layer using a mask to form a first photoresist pattern, coating a second photoresist having light sensing characteristic opposite to that of the first photoresist on the area between the first photoresist layer patterns, aligning the mask to allow its light shielding portion and light transmitting portion of the mask to be aligned to the wafer identically in case of the first exposure process, and carrying out the second exposure and development to the second photoresist layer to form a second photoresist pattern, the second exposure time being different from the first exposure time to allow the line width of the first photoresist pattern to be identical to the size of the light transmitting portion and to allow the line width of the second photoresist pattern to be smaller than the size of the light shielding portion.