| 摘要 |
The method includes the steps of (a) laminating a polysilicon film(13), nitride film 1(14), and CVD(Chemical Vapor Deposition) oxide film(15) in order on the silicon substrate(11), (b) laminating the nitride film 2(16) after forming a remaining polysilicon film(13) by etching the CVD oxide film(15), the nitride film 1(14), and the polysilicon film(13) selectively in order, (c) forming the nitride film 2 spacer(16') on the sidewall of the nitride film 1(14) by etching nitride film 2(16) by reactivity ionic etching without using mask, (d) laminating the amorphous silicon film(17) thinly with a thickness of about 100 to 400 angstroms by considering the degrees of oxidation of the silicon substrate's lower part and the degrees of pushing the nitride film 1(14) and the nitride film 2 spacer(16') down to prevent the nitride film 1(14) and the nitride film 2 spacer(16') from moving upward during the thermal oxidation process(17), at last, (e) forming a field oxide film(18,18') by oxidizing with wet oxidation process.
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