Method for fabricating specific termination angles in titanium tungsten layers

摘要

Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.

主权项

1. A method of forming a termination angle in a titanium tungsten layer in a semiconductor, the method comprising:
providing a titanium tungsten layer; applying a photo resist material to the titanium tungsten layer; exposing the photo resist material under a defocus condition to generate a resist mask having an edge portion; etching the titanium tungsten layer at least at the edge portion of the resist mask to result in a sloped termination of the titanium tungsten layer; and forming an oxide layer on the titanium tungsten layer wherein the oxide layer covers the termination angle.