| 摘要 |
The present invention is a semiconductor device comprising a semiconductor layer of SiC, a metal layer adapted to form a low resistance ohmic contact with the SiC-layer and a thin layer of a material having a smaller bandgap than the SiC of the SiC-layer and is placed between the SiC-layer and the metal layer. The SiC-layer is highly doped at least in the region next to the thin layer, and the material of the thin layer is a Group 3B-nitride including indium and at least another Group 3B-element.
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