发明名称 |
Prozess zur Herstellung eines Zweischichtenfilmträgers |
摘要 |
A two-layer film carrier for TAB is made from a substrate (1) prepared by forming a copper layer (2) on a polyimide film by additive plating. A photoresist layer (3) is formed on the copper layer, and another photoresist layer (3) on the polyimide film. Both of the photoresist layers are simultaneously exposed to light through a mask applied to each of them to define a desired pattern. The exposed portions of the photoresist layer on the copper layer are subjected to development and postbaking, whereby selected portions of the copper layer are exposed. The exposed portions of the copper layer are additive plated with copper, whereby leads (4) are formed. The exposed portions of the photoresist layer on the polyimide film are subjected to development and postbaking, whereby selected portions of the polyimide film are exposed (5, 6, 7). The remaining portions of the photoresist layer are removed from the copper layer and the underlying copper layer is etched. The exposed portions of the polyimide film are etched, and the remaining portions of the photoresist layer are removed from the polyimide film. |
申请公布号 |
DE69030542(T2) |
申请公布日期 |
1997.08.07 |
申请号 |
DE1990630542T |
申请日期 |
1990.08.24 |
申请人 |
SUMITOMO METAL MINING CO. LTD., TOKIO/TOKYO, JP |
发明人 |
CHONAN, TAKESHI;KUDO, YUKO;HIROTA, YOSHIHIRO, ICHIKAWA CITY, CHIBA PREF., JP |
分类号 |
H01L21/60;H01L21/48;H01L23/495;H05K1/03;H05K3/00;H05K3/10;H05K3/40;(IPC1-7):H01L21/48;H01L23/498 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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