发明名称 |
DOUBLE MESA LARGE AREA AlInGaBN LED DESIGN FOR DEEP UV AND OTHER APPLICATIONS |
摘要 |
Methods are provided for forming AlInGaBN material. The method can include growing an AlInGaBN layer on a substrate; removing a portion of the AlInGaBN layer from the substrate to define a plurality of AlInGaBN islands on the substrate; and growing a highly doped-AlInGaBN layer on each of the AlInGaBN islands. |
申请公布号 |
WO2016209892(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2016US38657 |
申请日期 |
2016.06.22 |
申请人 |
UNIVERSITY OF SOUTH CAROLINA |
发明人 |
KHAN, Asif |
分类号 |
H01L21/02;H01L33/22;H01L33/32 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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