发明名称 DOUBLE MESA LARGE AREA AlInGaBN LED DESIGN FOR DEEP UV AND OTHER APPLICATIONS
摘要 Methods are provided for forming AlInGaBN material. The method can include growing an AlInGaBN layer on a substrate; removing a portion of the AlInGaBN layer from the substrate to define a plurality of AlInGaBN islands on the substrate; and growing a highly doped-AlInGaBN layer on each of the AlInGaBN islands.
申请公布号 WO2016209892(A1) 申请公布日期 2016.12.29
申请号 WO2016US38657 申请日期 2016.06.22
申请人 UNIVERSITY OF SOUTH CAROLINA 发明人 KHAN, Asif
分类号 H01L21/02;H01L33/22;H01L33/32 主分类号 H01L21/02
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