PERPENDICULAR MAGNETIC MEMORY WITH FILAMENT CONDUCTION PATH
摘要
An embodiment includes an apparatus comprising: first and second electrodes on a substrate; a perpendicular magnetic tunnel junction (pMTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer; and an additional dielectric layer directly contacting first and second metal layers; wherein (a) the first metal layer includes an active metal and the second metal includes an inert metal, and (b) the second metal layer directly contacts the free layer. Other embodiments are described herein.
申请公布号
WO2016209249(A1)
申请公布日期
2016.12.29
申请号
WO2015US37898
申请日期
2015.06.26
申请人
INTEL CORPORATION
发明人
DOYLE, Brian S.;OGUZ, Kaan;O'BRIEN, Kevin P.;KENCKE, David L.;KARPOV, Elijah V.;KUO, Charles C.;DOCZY, Mark L.;SURI, Satyarth;CHAU, Robert S.;MUKHERJEE, Niloy;MAJHI, Prashant