| 摘要 |
PROBLEM TO BE SOLVED: To avoid producing voids by etching a visor-like part of an antireflective film, protruding to a topmost part of an Al alloy at the etching of the antireflective film, Al alloy and barrier metal film, using a resist film mask. SOLUTION: Using a resist film 1 as a mask, an antireflective film 2, Al alloy film 3 and barrier metal film 4 are formed in a predetermined circuit wiring pattern. This semiconductor device is exposed to a plasma of Cl2 -BCl3 mixed gas in an RIE apparatus to etch the film 1 by ions in the plasma, resulting in that it begins to shrink from the upper end of the film 2, and then the film 2 and side wall protective film 6 are also etched by the ions in the plasma, starting from their upper ends with the retrogress of the film 1. Thus, a visor-like part of the film 2 is removed and the side face of the metal laminate of the films 2, 3 forward tapers. The film 1 is removed and interlayer insulation film 7 is buried into the metal laminate.
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