| 摘要 |
PROBLEM TO BE SOLVED: To enable a design of circuits at a high degree of freedom with taking account of the line-to-line resistance and capacitance by providing two or more different-thickness groovy lines in the same wiring layer. SOLUTION: An Al line A103 of e.g. 0.5$μm thick is formed on a first silicon oxide film 102, second silicon oxide film 104 is formed on the entire surface and anisotropically etched down to about 0.5μm deep with a photoresist mask 105 to form first groovy openings 111-113 for lines B131, C132, D134, then the resist 105 is removed, the oxide film 104 is etched down to about 1.0μm deep with a photoresist mask 106 to form hole-like openings 120 and second groovy openings 121-122, the resist 106 is removed, an Al 107 is formed on the entire surface and polished by the chemical-mechanical method to make the surface of the Al 107 flush with that of the oxide film 104 and wirings 131-134 are formed.
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