发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To secure recharge period (tRP period) without delaying a RAS(row- address strobe) access period. SOLUTION: A latch circuit is installed in the path of a set signal RASS of a ROW system block, generated from an external-input ROW system control signal RASB in a RAS circuit. And the set signal RASS' of the ROW system block, which uses the timing signalϕR which can realize the tRP period to be secured as a latch signal, is made to be generated separately from the one of the conventional technique; a set signal RASS' of the ROW system block is used for the word system patch witch is different from the RAS access; and the set signal RASS of the ROW system block generated in the RAS circuit based on the conventional technique is used in the sense system path, which is the RAS access path.
申请公布号 JPH09320265(A) 申请公布日期 1997.12.12
申请号 JP19960153090 申请日期 1996.05.24
申请人 NEC CORP 发明人 TAKAOKA TETSUYA
分类号 G11C11/407;G11C11/409;(IPC1-7):G11C11/407 主分类号 G11C11/407
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