发明名称 |
METHOD FOR FORMING FINE OXIDE PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To make the width of a fine oxide film or oxide film pattern independent of the place by correcting the probe speed during writing so that the line density of an applied voltage or current per unit time, contributing to the oxidation, is const. SOLUTION: A pattern is formed, without dispersion of the heights at cross points 41 of oxide lines. The line density of an applied voltage per time contributing the oxidation is set. About the positions of oxidizing regions, the probe speed at writing position is corrected and determined. An electrolysis-assisted oxidation is executed according to the determined probe speed at positions. This makes the width of a fine oxide film or oxide film pattern independent of the place. |
申请公布号 |
JPH1012859(A) |
申请公布日期 |
1998.01.16 |
申请号 |
JP19960161351 |
申请日期 |
1996.06.21 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ARAKI SEI;MORIMOTO TADASHI;MORITA KIYOYUKI;YUKI KOICHIRO |
分类号 |
G01N37/00;G01Q60/10;G01Q60/24;G01Q80/00;H01L21/027;H01L21/316;H01L29/06;(IPC1-7):H01L29/06 |
主分类号 |
G01N37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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