| 摘要 |
PROBLEM TO BE SOLVED: To prevent high leak current and shot-circuiting, by forming a capaci tor between interconnection wiring layers of a semiconductor chip having a clean interface free from residue produced by treatment. SOLUTION: A capacitor 20 is formed between a mutual connection wiring 12 of a first level and an interconnection wiring layer 11 of a second level. A via 36 electrically connects the capacitor 20 with the mutual connection wiring 11 of the second level. The interconnection wiring 12 of the first level is used as a lower electrode of the capacitor 20, i.e., a base electrode, and connected with a lower via 30. The via 30 is formed in dielectric 22 and mutually connected with a lower conducting region. The dielectrics layer 22 and the upper surface of the via 30 are polished, and an insulating region and the conducting region form the same surface 31. The capacitor 20 is constituted of e.g. the interconnection wiring 12 of the first level, a dielectrics layer 14 and a layer of an upper electrode or a facing electrode 16. The upper electrode 16 is so formed that its peripheral edge is positioned inside the peripheral edge of the dielectrics layer 14. |
