| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a highly integrated semiconductor device. SOLUTION: A semiconductor device 1 comprises an external electrode 11, and also comprises a substrate 2 wherein a recessed part 8 is provided on a main surface and a wiring 9 is provided, at least one semiconductor chip 12 wherein, while it is fixed to the recessed part of the substrate, an electrode 13 is connected to the wiring 9 of the substrate 2 through electrical means, and a cap 15 so fixed to the main surface of the substrate 2 as to block the recessed part. The cap 15 is formed with a semiconductor chip 16 and an electrode 17 of the semiconductor chip 16 is connected to the wiring 9 of the substrate 2 by electrical means. The gap between the substrate 2 and the cap 15 is filled with an insulating resin 14, and an electrode surface of the semiconductor chip 16 constituting the cap and the semiconductor chip 12 fixed to the recessed part of the substrate 2 are coated with the insulating resin 14. The semiconductor chip 16 constituting the cap 15 has a size similar to that of the substrate 2. In addition, the rear surface of the substrate 2 contains the external electrode 11. |
