Semiconductor storage device

摘要

It is an object to provide a semiconductor storage device having an optimized sense enable time to reduce unnecessary power consumption. An output node (N1) of a sense amplifier (SA) is connected to an input of a tristate buffer (delay means) (TB) and an output node (N2) of the tristate buffer (TB) is connected to an input of an inverter (I1) forming data holding means (L1). The output nodes (N2 and N3) are connected to inputs of an EXNOR circuit (G1) and an output node (N4) of the EXNOR circuit (G1) is connected to a reset circuit (RS).