| 摘要 |
PROBLEM TO BE SOLVED: To improve a semiconductor laser in reliability even when it outputs a high power by a method in which a quantum well active layer, a first and a second barrier layer, and a first and a second optical waveguide layer are all set equal in a composition ratio of V component As to P. SOLUTION: Clad layers 2 and 8 and optical waveguide layers 3 and 7 are set in composition so as to lattice-match a GaAs substrate 1. Compression distorted barrier layers 4 and 6 are set in thickness so as not to cause defects such as displacement or the like while the layers 4 and 6 are grown, and the compression distorted barrier layers 4 and 6 is set in distortion so as to make up for the compressive distortion of an active layer 5 sandwiched in between them. At this point, the active layer 5, the optical waveguide layers 3 and 7, and the compression distorted barrier layers 4 and 6 are all the same in the composition ratio of V component As to P, so that V raw materials of AsH3 and PH3 used in a MOCVD growth process are not required to be switched, and a hetero-interface can be stably formed. In result, a distorted quantum well semiconductor device of wavelength 0.6 to 0.8μm, which is kept high in reliability at a high output power, can be obtained.
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