SILICON THIN FILM, SILICON SINGLE CRYSTAL PARTICLE GROUP AND THEIR FORMING METHOD, AND SEMICONDUCTOR DEVICE, FLASH MEMORY CELL AND THEIR MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a forming method of a silicon thin film which can arrange regularly silicon single crystal particle group on an insulating film, and form it easily in a short time. SOLUTION: An amorphous or polycrystalline silicon layer 13 formed on a substrate 12 is irradiated with a pulsed UV ray beam, thereby forming a silicon thin film 14 composed of silicon single crystal particle group on the substrate 12. In the above forming method of a silicon thin film, the traveling amount L of UV beam irradiation position from irradiation finish of a rectangular UV ray beam to the next irradiation start of the rectangular UV ray beam is set at most 40μm, and the ratio R (=L/W) of the traveling amount to the width W of the UV ray beam which is measured along the traveling direction is set to be 0.1-5%. Thereby a silicon thin film composed of nearly rectangular silicon single crystal particle group arranged in a lattice type on the substrate is formed. The preferred orientation to the surface of the substrate of silicon single crystal particles is almost (100).