Halbleiterbauelement mit durch Ionenimplantation eingebrachten Fremdatomen und Verfahren zu dessen Herstellung

摘要

A semiconductor component is disclosed with foreign atoms introduced by implantation and electrically activated by a regeneration process. Immediately after the regeneration process, the component has a mean surface roughness of less than 15 nm. For that purpose, silicium is added to the component during the regeneration process.