| 摘要 |
PROBLEM TO BE SOLVED: To form a high resistance epitaxial layer for forming an Si layer, without being affected by the impurity concn. on the back of a substrate during the epitaxial growth, by doing desired high resistance epitaxial growth on the substrate surface after the epitaxial growth on the back side of the substrate. SOLUTION: After the mirror polishing of the back side of a substrate at the epitaxial growth, a growth source uses SiCl4 and carrier gas uses H, to grow a back sealed epitaxial layer n3 on the substrate back side at e.g. 1150 deg.C. In the same condition, a high resistance epitaxial layer n<-> 4 at an impurity concn. of 1×10<13> cm<-3> e.g. is epitaxially grown on the surface of the substrate. This layer is never subjected to the sputter of the impurity (P) from the substrate surface, and hence a very high resistance epitaxial layer can be grown.
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