| 摘要 |
PROBLEM TO BE SOLVED: To obtain a dielectric film which is annealed at a low temperature, in which a gas is clocked up and whose flatness is achieved, by a method wherein a process gas which contains silicon, oxygen and dopant atoms is introduced into a reaction tank, helium is used as a carrier gas and many substrates are treated while a cleaning operation is processed. SOLUTION: Silicon, oxygen and a process gas which contains first dopant atoms as a deposition substance, a carrier gas and a liquid substance are mixed in a gas mixing tank 19 through a line 18, and their mixture is introduced into a CVD treatment tank 10 as a reaction tank by a gas distribution manifold 11. By its introduction, many wafers which are placed on a susceptor 12 are treated while a cleaning operation is processed. so as to vacuum-deposit a dielectric film. Thereby, the dielectric film which is formed on every wafer is annealed at a low temperature, its gap is blocked up, and its flatness can be achieved.
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