| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetostatic wave device having good temperature characteristics and being useful for a magnetostatic wave applied microwave band filter, resonator, S/N enhancer, etc. SOLUTION: About a magnetostatic wave device composed by a garnet magnetic thin film 2 for a magnetostatic wave device, a transducer 4 to excite magnetostatic wave on the magnetic thin film 2, and a bias magnetic field 3, the garnet magnetic thin film 2 is formed on the Gd3 Ga5 O12 substrate 1 one to five degrees off angled from 110} face by liquid phase epitaxial method and the angleθ1 +θ2 shall be 20-35 deg. or -20-35 deg. (θ1 andθ2 are plus for clockwise and minus for counterclockwise) provided thatθ1 is an angle between longer side direction 8 of the transducer 4 and the crystal <001> direction 7 of the magnetic thin film 2 andθ2 is an angle between a vertical direction 6 against to longer side direction of the transducer 4 and the supplied magnetic field direction 3 of the bias magnetic field.
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