| 摘要 |
PROBLEM TO BE SOLVED: To prevent the ununiformity of a resist applied to the peripheral portion of an orientation flat, an etching unevenness and such a pollution as a cleaning faultiness from occurring in a semiconductor substrate, by forming on its from or rear surface a mark comprising a recess which shows the discrimination between its front and rear surfaces and shows its crystal orientation, and by making the substrate in a true circular shape. SOLUTION: In one portion of the surface of a semiconductor substrate 3, a mark 4 comprising a linear recess is formed. If determining previously that the mark 4 comprising the recess is formed linearly along a specific crystal orientation, it can be shown by the mark 4. Also, when determining previously that the mark 4 comprising the recess is formed, e.g. on the front surface of the substrate 3, the discrimination between its front and rear surfaces and be shown by the mark 4. The size of the mark 4 made by the recess is sufficient if it has of a size visually determined. Further, the shape of the semiconductor substrate 3, is made to have substantially a true roundness. Thereby, the ununiformity of a resist applied to the peripheral portion of an orientation flat, an etching unevenness and such a pollution as a cleaning faultiness can be prevented. |
