Induced charge prevention in semiconductor imaging devices

摘要

An imager array includes a substrate with a plurality of superimposed layers of electrically conductive and active components. Sets of scan and data lines are electrically insulated from one another and also from a common electrode and active array components by dielectric material. Protection of the active components against static charge potential includes resistive means between the common electrode and a ground ring conductor around the array elements and in particular a thin film transistor circuit with a parallel pair of opposite polarity diode connected field effect transistors to safely drain the static charge during subsequent fabrication, test and standby period of the imager, while remaining in circuit during imager operation. Further electrostatic charge protection is provided to the array by an protective apparatus adapted to support the radiation imager while electrically contacting its ground ring to facilitate handling and processing while protecting against electrostatic charge damage during fabrication and testing, and enabling the positioning and bonding of the flexible external connections to the contact pads of the imager. Provision is made to enable heat and pressure for thermode bonding through the fixture to the contact pads while the imager is secured within the fixture.