发明名称 Kondensator mit einer Sauerstoff-Barriereschicht und einer ersten Elektrode aus einem Nichtedelmetall
摘要 A capacitor with a high epsilon dialectric or ferroelectric layer as a capacitor dialectric and a first electrode, substantially made out of conductive material free from noble metal. A barrier layer to suppress oxygen diffusion is placed between the capacitor dialectric and the first electrode. Known materials such as polysilicon or aluminium can thus be integrated as electrode material with high epsilon dielectric or ferrorelectric properties.
申请公布号 DE19640243(A1) 申请公布日期 1998.04.09
申请号 DE19961040243 申请日期 1996.09.30
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 SCHINDLER, GUENTHER, DR., 80802 MUENCHEN, DE;HARTNER, WALTER, DIPL.-PHYS., 86156 AUGSBURG, DE;MAZURE, CARLOS, DR., 85614 KIRCHSEEON, DE
分类号 H01L21/02;H01L29/92;(IPC1-7):H01G4/10;H01G4/005 主分类号 H01L21/02
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