发明名称 |
SUBSTRATE OF PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A manufacturing method of a substrate of a photoelectric conversion device includes the following steps. A single crystal silicon wafer is set into a chamber of a machine, wherein a germanium target or a silicon germanium target is disposed in the chamber. Thereafter, a physical vapor deposition process is performed to form a single crystal germanium thin film or a single crystal silicon germanium thin film on the single crystal silicon wafer. The manufacturing method reduces the production cost of substrates of photoelectric conversion devices. Furthermore, another substrate of a photoelectric conversion device is also provided. |
申请公布号 |
US2016300977(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514919715 |
申请日期 |
2015.10.21 |
申请人 |
SHIN SHIN NATURAL GAS CO., LTD. |
发明人 |
Chen Sheng-Hui;Tseng Shao-Ze;Tsao Chao-Yang;Chang Jenq-Yang |
分类号 |
H01L31/18;H01L31/0445 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a substrate of a photoelectric conversion device, comprising the steps of:
disposing a single crystal silicon wafer into a chamber of a machine, wherein the chamber has a germanium target or a silicon germanium target therein; and performing a physical vapor deposition, for forming a single crystal germanium thin film or a single crystal silicon germanium thin film on the single crystal silicon wafer. |
地址 |
New Taipei TW |