发明名称 SUBSTRATE OF PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A manufacturing method of a substrate of a photoelectric conversion device includes the following steps. A single crystal silicon wafer is set into a chamber of a machine, wherein a germanium target or a silicon germanium target is disposed in the chamber. Thereafter, a physical vapor deposition process is performed to form a single crystal germanium thin film or a single crystal silicon germanium thin film on the single crystal silicon wafer. The manufacturing method reduces the production cost of substrates of photoelectric conversion devices. Furthermore, another substrate of a photoelectric conversion device is also provided.
申请公布号 US2016300977(A1) 申请公布日期 2016.10.13
申请号 US201514919715 申请日期 2015.10.21
申请人 SHIN SHIN NATURAL GAS CO., LTD. 发明人 Chen Sheng-Hui;Tseng Shao-Ze;Tsao Chao-Yang;Chang Jenq-Yang
分类号 H01L31/18;H01L31/0445 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method of manufacturing a substrate of a photoelectric conversion device, comprising the steps of: disposing a single crystal silicon wafer into a chamber of a machine, wherein the chamber has a germanium target or a silicon germanium target therein; and performing a physical vapor deposition, for forming a single crystal germanium thin film or a single crystal silicon germanium thin film on the single crystal silicon wafer.
地址 New Taipei TW