ACTIVE DEVICE STRUCTURE AND FABRICATING METHOD THEREOF

摘要

An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.

主权项

1. An active device structure, comprising:
a gate; an oxide channel layer, overlapped with the gate in a top and bottom manner, wherein the oxide channel layer comprises a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer; a source, contacting the oxide channel layer; a drain, contacting the oxide channel layer, wherein a gap separating the source and the drain defines a channel area on the oxide channel layer; and a high power deposited insulation layer, contacting the top layer of the oxide channel layer.