| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein, on the surface of a silicon substrate with different conduction types, a tungsten film of the same film thickens is formed by a selective CVD method. SOLUTION: After a silicon oxide film 2 for element separation is formed on a p-type silicon substrate 1, a p-type well 3 and an n-type well 4 are formed. Then, an n<+> diffusion layer 8, an n-type gate electrode 7a, a p<+> -type diffusion layer 9, and a p-type gate electrode 7B are formed. Then, exposed to an As atmosphere, an As layer 10 is formed by a thickness about atom layer over the entire surface, and thermally treated. Those layers are left only on the surface of silicon substrate. By a CVD method, a tungsten film 11 is selectively formed. |
